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Bruce A. Tuttle, Chonglin Chen, Quanxi Jia, R. Ramesh's Advanced Dielectric, Piezoelectric and Ferroelectric Thin PDF

By Bruce A. Tuttle, Chonglin Chen, Quanxi Jia, R. Ramesh

ISBN-10: 1118407202

ISBN-13: 9781118407202

ISBN-10: 1574981838

ISBN-13: 9781574981834

Advances in synthesis and characterization of dielectric, piezoelectric and ferroelectric skinny motion pictures are integrated during this quantity. Dielectric, piezoelectric and ferroelectric skinny motion pictures have an immense influence on numerous advertisement and army structures together with tunable microwave units, stories, MEMS units, actuators and sensors. contemporary paintings on piezoelectric characterization, AFE to FE dielectric section transformation dielectrics, resolution and vapor deposited skinny movies, and fabrics integration are one of the issues integrated. Novel techniques to nanostructuring, characterization of fabric houses and actual responses on the nanoscale is also included.Content:

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Additional resources for Advanced Dielectric, Piezoelectric and Ferroelectric Thin Films, Volume 162

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Chen, H. H. Feng, Z. Zhang, A. Brazdeikis, Z. J. Huang, W. K. Chu, C. W. Chu, F. A. Miranda, F. W. Van Keuls, R. R. Romanofsky, and Y. Liou, Appl. Phys. Lett. 75, 412 (1999); i. , 78 (2001) 652. 3 K. R. Carroll, J. M. Pond, D. B. Chrisey, J. S. Horwitz, and R. E. Leuchtner, Appl. Phys. Lett. b, 63, 1292 (1993). 4 Q. X. Jia, J. R. Groves, P. Arendt, Y. Fan, A. T. Findikoglu, S. R. Foltyn, H. Jiang, and F. A. Miranda, Appl. Phys. Lett. 74,1564 (1999). -G. , J. Appl. Phys. 93, 504 (2003) 6 Somiya Y, Bhalla AS, Cross LE, INTERNAT.

Number and shape of the modes) similar to that of the BIT single crystal 36 • Advanced Dielectric, Piezoelectric and Ferroelectric Thin Films 100 ■ 0 ' • ' ' 100 200 300 400 ' « -1 500 600 700 1 Raman shift (cm' ) Fig. 4. %) BIT films. % Bi excess, at which second phase emerges. % Bi excess films respectively. 8,11. Comparing this mode with that in single crystal,11 this mode in thin film is usually lower than that of single crystal because of the existence of residue stress in thin films. % Bi excess films thus possibly indicates a stress relaxation.

Kurihara, T. Shioga, J. D. Baniecki, "Electrical properties of low-inductance barium strontium titanate thin film decoupling", Journal of the European Ceramic Society, 24 1873-1876 (2004). D. Baniecki, T. Shioga, K. Kurihara, N. Kamehara, "Investigation of the importance of interface and bulk limited transport mechanisms on the leakage current of high dielectric constant thin film capacitors", J. Appl. Phys. 94 [10] 6741(2003). 7 S. B. Krupanidhi, "Microstructure related influence on the electrical properties of pulsed laser ablated (Ba, Sr)Ti03 thinfilms",J.

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Advanced Dielectric, Piezoelectric and Ferroelectric Thin Films, Volume 162 by Bruce A. Tuttle, Chonglin Chen, Quanxi Jia, R. Ramesh


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