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Download e-book for iPad: Analog and VLSI Circuits, 3rd Edition (The Circuits and by Wai-Kai Chen

By Wai-Kai Chen

ISBN-10: 1420058916

ISBN-13: 9781420058918

That includes 1000's of illustrations and references, this quantity within the 3rd version of the Circuits and Filters guide, presents the newest info on analog and VLSI circuits, omitting broad thought and proofs in prefer of diverse examples all through every one chapter.
The first a part of the textual content specializes in analog built-in circuits, featuring updated wisdom on monolithic gadget types, analog circuit cells, excessive functionality analog circuits, RF conversation circuits, and PLL circuits.
In the second one half the e-book, famous members provide the most recent findings on VLSI circuits, together with electronic platforms, facts converters, and systolic arrays.

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Additional info for Analog and VLSI Circuits, 3rd Edition (The Circuits and Filters Handbook)

Sample text

60 confirms that the free electron concentration is significantly smaller than NA. 24a depicts the depletion charge density, r(y), beneath the oxide–semiconductor interface, where Wd represents the depth of the depletion layer established at the interface. 21a. (b) The electric field intensity as a function of bulk substrate depth measured with respect to the interfacial surface, corresponding to the charge profile in (a). (c) The potential implied by the electric field plot in (b). In view of the fact that E(Wd) is zero in the undepleted, charge neutral substrate region corresponding to W !

17 A simplified three-dimensional depiction of an N-channel MOSFET (NMOS) and its corresponding electrical schematic symbol. The diagram is not drawn to scale. 18 A simplified three-dimensional depiction of an P-channel MOSFET (PMOS) and its corresponding electrical schematic symbol. The diagram is not drawn to scale. Lying atop the P-type bulk substrate is an insulating silicon dioxide layer of thickness Tox that extends into the page as shown by a gate width, W. The oxide thickness in the extant state of the art is of the order of several tens of angstroms, where 1 Å is 10À8 cm.

19 (a) NMOS transistor operated with Vds ¼ 0 and Vbs ¼ 0. Although the battery connected between the gate and the source ensures Vgs > 0, Vgs 0 is allowed in the discussion that references this circuit. (b) Cross-section diagram corresponding to the circuit in (a). Note that all applied voltages are referred to the source terminal. The diagram in (b) is not drawn to scale. mirrors the gate–drain voltage, Vgd, regardless of the voltage applied between gate and source or gate and bulk terminals. In the absence of drain, source, bulk, and gate currents, Vds ¼ 0 also guarantees that surface potential wo, measured from the oxide semiconductor interface-to-the neutral zone of the bulk substrate, is the same throughout the channel region extending from x ¼ 0-to-x ¼ L in the subject diagram.

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Analog and VLSI Circuits, 3rd Edition (The Circuits and Filters Handbook) by Wai-Kai Chen


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